第六部分. 结论
本文主要介绍了NVM的发展过程和技术概况。主要的编程手段有热载流子注入和FN隧道效应。在FN隧道效应中，门极氧化层厚度一般小于12nm，而在热电子注入中可以厚很多。两种典型的擦除机制为紫外照射和FN隧道效应，通常在UV EPROM中使用紫外照射擦除的方法，而在EEPROM和FLASH存储器中则使用了FN隧道效应擦除机制。紫外擦除所需的时间一般为10分钟而FN隧道效应擦除的时间根据控制门极和漏极上加载的电压强度不同仅为1ms到10ms。最快的编程机制是热电子注入，一般只需100ms。在此过程中，我们讨论了幸运电子模型，这个模型揭示了门电流是如何通过可能性模型来计算的过程。虽然注入的效率很低，但将热电子注入浮栅的过程是很快的，这是因为有外加强电场的作用。对于每个NVM器件来说，可靠性的问题都存在，而耐久力和数据保持力是最重要的两个问题。此外，在编程中和擦除中产生的干扰也是影响NVM可靠性的一个因素。


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